Samsung DDR3 8GB 1600MHz 8GB vs Mushkin 99[2/7/4]208F 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Mushkin 99[2/7/4]208F 8GB

Mushkin 99[2/7/4]208F 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Mushkin 99[2/7/4]208F 8GB

需要考虑的原因
Mushkin 99[2/7/4]208F 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 43

左右 -115% 更低的延时
更快的读取速度，GB/s

18.9 14.9

测试中的平均数值
更快的写入速度，GB/s

15.0 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Mushkin 99[2/7/4]208F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 20
读取速度，GB/s

14.9 18.9
写入速度，GB/s

9.6 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Mushkin 99[2/7/4]208F 8GB

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A-DATA Technology DDR2 800G 2GB

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Micron Technology 18ASF2G72AZ-2G1B1 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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InnoDisk Corporation M4S0-4GSSNCIK 4GB

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Gloway International (HK) STK4U2400D17041C 4GB

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Kingston 9905403-090.A01LF 4GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

Micron Technology 8ATF1G64HZ-2G6E3 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB