Samsung DDR3 8GB 1600MHz 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 74

左右 42% 更低的延时
更快的读取速度，GB/s

14.9 13.6

测试中的平均数值
更快的写入速度，GB/s

9.6 7.7

测试中的平均数值

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 74
读取速度，GB/s

14.9 13.6
写入速度，GB/s

9.6 7.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 1616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Smart Modular SF4721G8CKHH6DFSDS 8GB

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Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

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SK Hynix DDR2 800 2G 2GB

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Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB