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Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology GD2.0918CT.001 4GB

Samsung M3 78T2863EHS-CF7 1GB vs Apacer Technology GD2.0918CT.001 4GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    59 left arrow 71
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.2
    测试中的平均数值
Apacer Technology GD2.0918CT.001 4GB 需要考虑的原因
Apacer Technology GD2.0918CT.001 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology GD2.0918CT.001 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 71
  • 读取速度，GB/s
    4,833.8 left arrow 15.2
  • 写入速度，GB/s
    2,123.3 left arrow 8.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    731 left arrow 1773

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Apacer Technology GD2.0918CT.001 4GB RAM的比较

Kingston HP32D4U8S8HC-8XR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
G Skill Intl F4-3200C14-8GTZKO 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Apacer Technology 78.CAGMR.40C0B 8GB
Apacer Technology 78.CAGMR.40C0B 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CM4B16G1J2400A16K2-O 16GB
Corsair CM4B16G1J2400A16K2-O 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4133C19-8GTZR 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Transcend Information JM2666HLE-16G 16GB
Transcend Information JM2666HLE-16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2933C16-8GTZRX 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C18-8GTZRX 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMT64GX4M4C3000C15 16GB
Corsair CMT64GX4M4C3000C15 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM