Samsung M3 78T2863EHS-CF7 1GB vs Avant Technology W642GU42J5213N8 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.9

测试中的平均数值

Avant Technology W642GU42J5213N8 16GB

需要考虑的原因
Avant Technology W642GU42J5213N8 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 59

左右 -55% 更低的延时
更快的写入速度，GB/s

9.9 2,123.3

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Avant Technology W642GU42J5213N8 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 38
读取速度，GB/s

4,833.8 12.9
写入速度，GB/s

2,123.3 9.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Mushkin 99[2/7/4]209F 8GB

Mushkin 99[2/7/4]209F 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M4 70T3354BZ0-CCC 256MB

Samsung M4 70T3354BZ0-CCC 256MB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Kingston 9905702-012.A00G 8GB

Kingston 9905702-012.A00G 8GB

Corsair CM3B4G2C1600L9 4GB

Corsair CM3B4G2C1600L9 4GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-3466C16-16GTZSW 16GB

G Skill Intl F4-3466C16-16GTZSW 16GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston HX421C14FB/4 4GB

Kingston HX421C14FB/4 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB