Samsung M3 78T2863EHS-CF7 1GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值
更快的写入速度，GB/s

2,123.3 12.0

测试中的平均数值

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 59

左右 -136% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 25
读取速度，GB/s

4,833.8 15.9
写入速度，GB/s

2,123.3 12.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3023

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSB.8FAR 4GB

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A-DATA Technology AD73I1C1674EV 4GB

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Mushkin MR[A/B]4U300JJJM8G 8GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-2133C15-8GFXR 8GB

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Kingston KF560C40-16 16GB

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Panram International Corporation D4N2400PS-8G 8GB

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Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMK64GX4M2A2666C16 32GB

Corsair CMK64GX4M2A2666C16 32GB

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Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB