SK Hynix HMT425S6CFR6A-PB 2GB vs Corsair CMD32GX4M4C3466C16W 8GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

Corsair CMD32GX4M4C3466C16W 8GB

需要考虑的原因
Corsair CMD32GX4M4C3466C16W 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 41

左右 -105% 更低的延时
更快的读取速度，GB/s

20.3 10.1

测试中的平均数值
更快的写入速度，GB/s

16.3 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMD32GX4M4C3466C16W 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 20
读取速度，GB/s

10.1 20.3
写入速度，GB/s

7.1 16.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1484 3708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173EB0-CK0 4GB

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Crucial Technology BL16G32C16S4B.16FE 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT16G4SFD8266.16FE1 16GB

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Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

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Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB