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Samsung M378B5173EB0-CK0 4GB
Crucial Technology CT51264BA1339.M16F 4GB

Samsung M378B5173EB0-CK0 4GB vs Crucial Technology CT51264BA1339.M16F 4GB

总分
star star star star star
Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分
star star star star star
Crucial Technology CT51264BA1339.M16F 4GB

Crucial Technology CT51264BA1339.M16F 4GB

差异 规格 评论

差异

Samsung M378B5173EB0-CK0 4GB 需要考虑的原因
Samsung M378B5173EB0-CK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Crucial Technology CT51264BA1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 42
    左右 -20% 更低的延时

规格

完整的技术规格清单
Samsung M378B5173EB0-CK0 4GB
Crucial Technology CT51264BA1339.M16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    42 left arrow 35
  • 读取速度，GB/s
    13.9 left arrow 13.3
  • 写入速度，GB/s
    8.1 left arrow 7.5
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2409

Samsung M378B5173EB0-CK0 4GB RAM的比较

Essencore Limited KD48GU880-26N160T 8GB

Crucial Technology CT51264BA1339.M16F 4GB RAM的比较

Corsair CMX4GX3M2A1600C9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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