Corsair CMX4GX3M2A1600C9 2GB vs Crucial Technology CT51264BA1339.M16F 4GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Crucial Technology CT51264BA1339.M16F 4GB

Crucial Technology CT51264BA1339.M16F 4GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

更快的读取速度，GB/s

13.9 13.3

测试中的平均数值
更快的写入速度，GB/s

8.7 7.5

测试中的平均数值

Crucial Technology CT51264BA1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 38

左右 -9% 更低的延时

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT51264BA1339.M16F 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

38 35
读取速度，GB/s

13.9 13.3
写入速度，GB/s

8.7 7.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2106 2409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.D1GS7.B7B0B 16GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

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Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

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G Skill Intl F4-3200C22-32GRS 32GB

G Skill Intl F4-3200C22-32GRS 32GB

Samsung M3 78T5663EH3-CF7 2GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

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Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB