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Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB

Samsung M471B1G73QH0-YK0 8GB vs Micron Technology 16ATF1G64HZ-2G1B1 8GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Micron Technology 16ATF1G64HZ-2G1B1 8GB 需要考虑的原因
Micron Technology 16ATF1G64HZ-2G1B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 47
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 39
  • 读取速度，GB/s
    11.8 left arrow 13.8
  • 写入速度，GB/s
    8.0 left arrow 10.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 2443

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMSX16GX4M2A2666C18 8GB
Corsair CMSX16GX4M2A2666C18 8GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMK8GX4M1Z3600C18 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
AMD R748G2400U2S-UO 8GB
AMD R748G2400U2S-UO 8GB
内存RAM
Samsung 36HTF51272PZ-800H1 4GB
Samsung 36HTF51272PZ-800H1 4GB
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
内存RAM