Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMT128GX4M8C3000C15 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Corsair CMT128GX4M8C3000C15 16GB

Corsair CMT128GX4M8C3000C15 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的写入速度，GB/s

2,123.3 12.4

测试中的平均数值

Corsair CMT128GX4M8C3000C15 16GB

需要考虑的原因
Corsair CMT128GX4M8C3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 59

左右 -59% 更低的延时
更快的读取速度，GB/s

9.9 4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMT128GX4M8C3000C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 37
读取速度，GB/s

4,833.8 9.9
写入速度，GB/s

2,123.3 12.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M471A1K43BB1-CTD 8GB

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Samsung M471B5273CH0-CH9 4GB

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A-DATA Technology DDR4 3000 2OZ 8GB

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Crucial Technology CT8G4DFRA266.C8FN 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB