Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M393A1G40EB1-CPB 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 46% 更低的延时
更快的读取速度，GB/s

12.1 11

测试中的平均数值

Samsung M393A1G40EB1-CPB 8GB

需要考虑的原因
Samsung M393A1G40EB1-CPB 8GB

报告一个错误

更快的写入速度，GB/s

8.7 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M393A1G40EB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 46
读取速度，GB/s

12.1 11.0
写入速度，GB/s

8.6 8.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393A1G40EB1-CPB 8GB

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Gloway International (HK) STK4U2400D17042C 4GB

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Kingston 99U5403-036.A00G 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-2666C15-8GVS 8GB

G Skill Intl F4-2666C15-8GVS 8GB