Samsung M3 78T2863EHS-CF7 1GB vs Essencore Limited IM48GU48A30-GIIHM 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Essencore Limited IM48GU48A30-GIIHM 8GB

Essencore Limited IM48GU48A30-GIIHM 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.3

测试中的平均数值
更快的写入速度，GB/s

2,123.3 15.5

测试中的平均数值

Essencore Limited IM48GU48A30-GIIHM 8GB

需要考虑的原因
Essencore Limited IM48GU48A30-GIIHM 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 59

左右 -195% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Essencore Limited IM48GU48A30-GIIHM 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 20
读取速度，GB/s

4,833.8 20.3
写入速度，GB/s

2,123.3 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Essencore Limited IM48GU48A30-GIIHM 8GB

Essencore Limited IM48GU48A30-GIIHM 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston 9905701-032.A00G 16GB

Kingston 9905701-032.A00G 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 9965662-010.A00G 16GB

Kingston 9965662-010.A00G 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMR16GX4M2C 8GB

Corsair CMR16GX4M2C 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB