Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-3200C16-16GIS 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值
更快的写入速度，GB/s

2,123.3 14.1

测试中的平均数值

G Skill Intl F4-3200C16-16GIS 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GIS 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3200C16-16GIS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,833.8 18.0
写入速度，GB/s

2,123.3 14.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

Corsair CMSO4GX3M1C1600C11 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

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Corsair CMD32GX4M4A2800C16 8GB

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Kingston 99U5474-023.A00LF 4GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

A-DATA Technology AO1P26KCST2-BZISHC 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston MSI24D4S7D8MHMH6 16GB

Kingston MSI24D4S7D8MHMH6 16GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9905702-071.A00G 8GB

Kingston 9905702-071.A00G 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB