Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-4000C18-16GTRG 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19.7

测试中的平均数值
更快的写入速度，GB/s

2,123.3 16.9

测试中的平均数值

G Skill Intl F4-4000C18-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 59

左右 -74% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-4000C18-16GTRG 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 34
读取速度，GB/s

4,833.8 19.7
写入速度，GB/s

2,123.3 16.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3700

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C18D4/8G 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HMA81GU6CJR8N-VK 8GB

SK Hynix HMA81GU6CJR8N-VK 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

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Kingston X2YH1K-MIE 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

SK Hynix GKE800SO51208-2133AH 8GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 99U5665-001.A00G 4GB

Kingston 99U5665-001.A00G 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB