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Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
比较
Samsung M3 78T2863EHS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
总分
Samsung M3 78T2863EHS-CF7 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
59
左右 -64% 更低的延时
更快的读取速度,GB/s
9.1
4
测试中的平均数值
更快的写入速度,GB/s
7.9
2,123.3
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
36
读取速度,GB/s
4,833.8
9.1
写入速度,GB/s
2,123.3
7.9
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
731
2090
Samsung M3 78T2863EHS-CF7 1GB RAM的比较
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT8G48C40U5.M4A1 8GB
Kingston KF548C38-16 16GB
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Hyundai Inc AR36C18S8K2HU416R 8GB
Kingston K1N7HK-ELC 2GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
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Crucial Technology CT4G4DFS8213.8FA11 4GB
Kingston KHX2800C14D4/8GX 8GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Kingston 9905403-011.A03LF 2GB
Kingston MSI24D4U7D8MD-16 16GB
报告一个错误
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Bug description
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