Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 9ASF1G72PZ-2G3A1 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 10.2

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G3A1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G3A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

48 59

左右 -23% 更低的延时
更快的写入速度，GB/s

7.4 2,123.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 48
读取速度，GB/s

4,833.8 10.2
写入速度，GB/s

2,123.3 7.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2190

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C18-8GTRS 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

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Samsung M471B1G73QH0-YK0 8GB

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Avant Technology J642GU42J5213N4 16GB

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Kingston KVR16N11/8-SP 8GB

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Kingston KHX3600C18D4/32GX 32GB

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SpecTek Incorporated ?????????????????? 2GB

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Corsair CMD32GX4M4B3733C17 8GB

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Kingston 99U5584-005.A00LF 4GB

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Crucial Technology BLS4G4D26BFSC.8FE 4GB

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Hyundai Inc GR26C16S8K2HU416 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Corsair CMT64GX4M8Z3600C16 8GB

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Apacer Technology 78.C2GFP.C700B 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB