Samsung M3 78T2863EHS-CF7 1GB vs Mushkin 99[2/7/4]205F 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.5

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.3

测试中的平均数值

Mushkin 99[2/7/4]205F 8GB

需要考虑的原因
Mushkin 99[2/7/4]205F 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 59

左右 -127% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Mushkin 99[2/7/4]205F 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 26
读取速度，GB/s

4,833.8 13.5
写入速度，GB/s

2,123.3 11.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

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Kingston 9905702-010.A00G 8GB

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Crucial Technology CT8G4SFS824A.M8FE 8GB

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Corsair CMU64GX4M4C3000C15 16GB

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Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

Kingston KHX3200C16D4/4GX 4GB

Kingston KHX3200C16D4/4GX 4GB