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Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Patriot Memory (PDP Systems) 2666 C15 Series 4GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
31
左右 19% 更低的延时
需要考虑的原因
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
报告一个错误
更快的读取速度,GB/s
16.3
12.1
测试中的平均数值
更快的写入速度,GB/s
12.8
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
31
读取速度,GB/s
12.1
16.3
写入速度,GB/s
8.6
12.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
3084
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M471A1G43DB0-0-B 8GB
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Kingston 9905711-007.A00G 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston HX432C15PB3/16 16GB
Crucial Technology CT102464BA160B.M16 8GB
Corsair CM4X4GF2666C16K4 4GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3200C16-8GFX 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston XK2M26-MIE-NX 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMD128GX4M8A2666C15 16GB
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK16GX4M1D3000C16 16GB
报告一个错误
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