Samsung M3 78T2863EHS-CF7 1GB vs Samsung 9905599-020.A00G 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.2

测试中的平均数值

Samsung 9905599-020.A00G 16GB

需要考虑的原因
Samsung 9905599-020.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 59

左右 -127% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Samsung 9905599-020.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 26
读取速度，GB/s

4,833.8 15.6
写入速度，GB/s

2,123.3 13.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

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Kingston HP32D4U8S8ME-8X 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB