Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.5

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 59

左右 -90% 更低的延时
更快的写入速度，GB/s

9.4 2,123.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 31
读取速度，GB/s

4,833.8 12.5
写入速度，GB/s

2,123.3 9.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CMK16GX4M2Z4000C18 8GB

Corsair CMK16GX4M2Z4000C18 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Kingston KHX2400C15D4/8G 8GB

Kingston KHX2400C15D4/8G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-2666C18-8GRS 8GB

G Skill Intl F4-2666C18-8GRS 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Crucial Technology BLS4G4S240FSD.8FAR 4GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Kingston 9905630-018.A00G 8GB

Kingston 9905630-018.A00G 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

G Skill Intl F4-2933C16-16GFX 16GB

G Skill Intl F4-2933C16-16GFX 16GB