Samsung M3 78T2863EHS-CF7 1GB vs V-GEN D4H8GL36A8TXV 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20

测试中的平均数值

V-GEN D4H8GL36A8TXV 8GB

需要考虑的原因
V-GEN D4H8GL36A8TXV 8GB

报告一个错误

低于PassMark测试中的延时，ns

53 59

左右 -11% 更低的延时
更快的写入速度，GB/s

9.4 2,123.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

V-GEN D4H8GL36A8TXV 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 53
读取速度，GB/s

4,833.8 20.0
写入速度，GB/s

2,123.3 9.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A Force Manufacturing Ltd. UD-01G64V2133P 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Avant Technology J642GU42J2320NQ 16GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

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Kingston KHX3200C18D4/8G 8GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

Golden Empire CL15-17-17 D4-3200 8GB

Golden Empire CL15-17-17 D4-3200 8GB

G Skill Intl F5-6400J3239G16G 16GB

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Mushkin 991679ES 996679ES 2GB

Essencore Limited KD4AGS88C-26N1900 16GB

Essencore Limited KD4AGS88C-26N1900 16GB