Samsung M3 78T2863QZS-CF7 1GB vs Corsair CMN32GX4M2Z3600C16 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Corsair CMN32GX4M2Z3600C16 16GB

Corsair CMN32GX4M2Z3600C16 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.6

测试中的平均数值

Corsair CMN32GX4M2Z3600C16 16GB

需要考虑的原因
Corsair CMN32GX4M2Z3600C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 69

左右 -188% 更低的延时
更快的写入速度，GB/s

15.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMN32GX4M2Z3600C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 24
读取速度，GB/s

4,217.2 18.6
写入速度，GB/s

1,857.7 15.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

668 3800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-3300C16-16GTZSW 16GB

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SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB

Samsung M393B1K70CH0-CH9 8GB

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Patriot Memory (PDP Systems) 3733 C17 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

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A-DATA Technology AO1P24HC4R1-BUYS 4GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston KHX3466C16D4/8GX 8GB

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Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

G Skill Intl F4-3200C14-16GTZKO 16GB

G Skill Intl F4-3200C14-16GTZKO 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CMK32GX4M4C3400C16 8GB

Corsair CMK32GX4M4C3400C16 8GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB