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Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB

Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology BL16G36C16U4BL.M16FE 16GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.7
    测试中的平均数值
Crucial Technology BL16G36C16U4BL.M16FE 16GB 需要考虑的原因
Crucial Technology BL16G36C16U4BL.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 69
    左右 -188% 更低的延时
  • 更快的写入速度，GB/s
    18.4 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 24
  • 读取速度，GB/s
    4,217.2 left arrow 19.7
  • 写入速度，GB/s
    1,857.7 left arrow 18.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    668 left arrow 4182

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3300C16-8GTZSW 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kingston HP26D4S9S8MH-8 8GB
Kingston HP26D4S9S8MH-8 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMD16GX4M4B2400C10 4GB
Corsair CMD16GX4M4B2400C10 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
内存RAM
Kingston 9905471-074.A00LF 8GB
Kingston 9905471-074.A00LF 8GB
Samsung M391A1K43BB1-CRC 8GB
Samsung M391A1K43BB1-CRC 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M378A4G43AB2-CWE 32GB
Samsung M378A4G43AB2-CWE 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Essencore Limited KD4AGU880-34A170X 16GB
Essencore Limited KD4AGU880-34A170X 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMU32GX4M2C3200C16 16GB
Corsair CMU32GX4M2C3200C16 16GB
内存RAM