Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology CT16G4SFD832A.C16FJ 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值

Crucial Technology CT16G4SFD832A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.C16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 69

左右 -103% 更低的延时
更快的写入速度，GB/s

16.9 1,857.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 34
读取速度，GB/s

4,217.2 18.2
写入速度，GB/s

1,857.7 16.9
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

668 3465

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965433-034.A00LF 4GB

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Samsung M393B1G70BH0-CK0 8GB

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Corsair CMK64GX4M4A2133C13 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMWX8GD3200C16W2E 8GB

Corsair CMWX8GD3200C16W2E 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-2400C11-8GXM 8GB

G Skill Intl F3-2400C11-8GXM 8GB