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Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT16G4SFS8266.C8FE 16GB

Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology CT16G4SFS8266.C8FE 16GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Crucial Technology CT16G4SFS8266.C8FE 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
Crucial Technology CT16G4SFS8266.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4SFS8266.C8FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 69
    左右 -86% 更低的延时
  • 更快的写入速度，GB/s
    12.7 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 37
  • 读取速度，GB/s
    4,217.2 left arrow 15.7
  • 写入速度，GB/s
    1,857.7 left arrow 12.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    668 left arrow 2971

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
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Corsair CMV16GX4M1A2133C15 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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G Skill Intl F4-2666C19-8GRS 8GB
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