Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology CT8G4SFRA32A.M8FJ 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA32A.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 69

左右 -116% 更低的延时
更快的写入速度，GB/s

13.4 1,857.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 32
读取速度，GB/s

4,217.2 16.6
写入速度，GB/s

1,857.7 13.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

668 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C14-16GVK 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology CT8G4SFRA32A.M8FJ 8GB

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INTENSO 5641152 4GB

INTENSO 5641152 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Crucial Technology CT8G4DFS832A.C8FE 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 9905700-097.A00G 8GB

Kingston 9905700-097.A00G 8GB