SK Hynix HMT451S6BFR8A-PB 4GB vs Crucial Technology CT8G4SFS832A.C8FE 8GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 48

左右 8% 更低的延时

Crucial Technology CT8G4SFS832A.C8FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS832A.C8FE 8GB

报告一个错误

更快的读取速度，GB/s

16.8 12.3

测试中的平均数值
更快的写入速度，GB/s

13.4 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 48
读取速度，GB/s

12.3 16.8
写入速度，GB/s

7.8 13.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1977 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173BH0-CH9 4GB

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Corsair CMT64GX5M2B5200C40 32GB

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Corsair CMK32GX5M2B5600C36 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 16JTF1G64AZ-1G6E1 8GB

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Kingston 9905700-072.A01G 16GB

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Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB

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Kingston 9965433-034.A00LF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB