Nanya Technology NT4GC72B4NA1NL-CG 4GB vs A-DATA Technology AO1P32MCST2-BW4S 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

A-DATA Technology AO1P32MCST2-BW4S 16GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

A-DATA Technology AO1P32MCST2-BW4S 16GB

需要考虑的原因
A-DATA Technology AO1P32MCST2-BW4S 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 -27% 更低的延时
更快的读取速度，GB/s

17.6 10.6

测试中的平均数值
更快的写入速度，GB/s

15.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 33
读取速度，GB/s

10.6 17.6
写入速度，GB/s

7.8 15.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 3510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5471-052.A00LF 8GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471B5273EB0-CK0 4GB

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Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Kingston 99U5711-001.A00G 4GB

Kingston 99U5711-001.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

A-DATA Technology AX5U6000C4016G-B 16GB

A-DATA Technology AX5U6000C4016G-B 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3200C14-8GFX 8GB

G Skill Intl F4-3200C14-8GFX 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB