Nanya Technology M2S4G64CB8HB5N-CG 4GB vs Corsair CMWB8G1L2666A16W4 8GB

总分

Nanya Technology M2S4G64CB8HB5N-CG 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

总分

Corsair CMWB8G1L2666A16W4 8GB

Corsair CMWB8G1L2666A16W4 8GB

差异规格评论

差异

Nanya Technology M2S4G64CB8HB5N-CG 4GB

需要考虑的原因
Nanya Technology M2S4G64CB8HB5N-CG 4GB

报告一个错误

Corsair CMWB8G1L2666A16W4 8GB

需要考虑的原因
Corsair CMWB8G1L2666A16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 29

左右 -32% 更低的延时
更快的读取速度，GB/s

17.8 9.9

测试中的平均数值
更快的写入速度，GB/s

13.4 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2S4G64CB8HB5N-CG 4GB

Corsair CMWB8G1L2666A16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 22
读取速度，GB/s

9.9 17.8
写入速度，GB/s

8.1 13.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1691 3036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-1333C9-4GIS 4GB

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Crucial Technology CT16G4DFD832A.C16FN 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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Samsung M393A2K40CB2-CTD 16GB

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

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Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB