Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-2666C18-8GTZR 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.1

测试中的平均数值

G Skill Intl F4-2666C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-2666C18-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 69

左右 -146% 更低的延时
更快的写入速度，GB/s

14.1 1,857.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-2666C18-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 28
读取速度，GB/s

4,217.2 17.1
写入速度，GB/s

1,857.7 14.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 3379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMW16GX4M2D3000C16 8GB

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Kingston 99U5471-030.A00LF 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMK128GX4M8A2400C14 16GB

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Samsung M471B5773DH0-CK0 2GB

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Samsung M471A5143SB1-CRC 4GB

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Samsung M378A2G43BB3-CWE 16GB

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G Skill Intl F4-3200C14-8GTZSK 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Apacer Technology 78.D2GFH.4030B 16GB

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

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Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB