Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3200C14-16GVK 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20

测试中的平均数值

G Skill Intl F4-3200C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 69

左右 -138% 更低的延时
更快的写入速度，GB/s

15.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3200C14-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 29
读取速度，GB/s

4,217.2 20.0
写入速度，GB/s

1,857.7 15.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9965604-016.C01G 8GB

Kingston 9965604-016.C01G 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMWX16GC3000C16W4D 16GB

Corsair CMWX16GC3000C16W4D 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Essencore Limited KD48GU881-26N190D 8GB

Essencore Limited KD48GU881-26N190D 8GB