Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3600C14-16GTZR 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 25.6

测试中的平均数值

G Skill Intl F4-3600C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 69

左右 -176% 更低的延时
更快的写入速度，GB/s

20.7 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3600C14-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 25
读取速度，GB/s

4,217.2 25.6
写入速度，GB/s

1,857.7 20.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 4537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kingston 9905678-043.A00G 8GB

Kingston 9905678-043.A00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology AFLD48VH1P 8GB

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Kingston 9905403-156.A00LF 2GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Kingston 9965690-002.A00G 8GB

Kingston 9965690-002.A00G 8GB