Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3600C18-16GTRG 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值

G Skill Intl F4-3600C18-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-3600C18-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 69

左右 -146% 更低的延时
更快的写入速度，GB/s

16.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3600C18-16GTRG 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 28
读取速度，GB/s

4,217.2 18.0
写入速度，GB/s

1,857.7 16.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3889

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMH32GX4M4E3200C16 8GB

Corsair CMH32GX4M4E3200C16 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston 9965662-012.A01G 16GB

Kingston 9965662-012.A01G 16GB