RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863QZS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
比较
Samsung M3 78T2863QZS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
总分
Samsung M3 78T2863QZS-CF7 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
16
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
69
左右 -188% 更低的延时
更快的写入速度,GB/s
10.8
1,857.7
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
69
24
读取速度,GB/s
4,217.2
16.0
写入速度,GB/s
1,857.7
10.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
668
2731
Samsung M3 78T2863QZS-CF7 1GB RAM的比较
Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX3200C18D4/4G 4GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK16GX4M4B3000C15 4GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Corsair CMW32GX4M2C3000C15 16GB
Samsung M3 78T2863QZS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Corsair CMY8GX3M2A2666C10 4GB
Shenzhen Xingmem Technology Corp 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMD16GX4M2B2400C10 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
Samsung M3 93T5750CZA-CE6 2GB
Kingston 16ATF2G64AZ-2G1B1 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Corsair CMH16GX4M2D3600C18 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Kingston 9905471-084.A01LF 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3466C16-8GTZKW 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
报告一个错误
×
Bug description
Source link