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Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX2400C12D4/4GX 4GB

Samsung M3 78T2863QZS-CF7 1GB vs Kingston KHX2400C12D4/4GX 4GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.5
    测试中的平均数值
Kingston KHX2400C12D4/4GX 4GB 需要考虑的原因
Kingston KHX2400C12D4/4GX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 69
    左右 -103% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX2400C12D4/4GX 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 34
  • 读取速度，GB/s
    4,217.2 left arrow 15.5
  • 写入速度，GB/s
    1,857.7 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 2881

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Kingston KHX2400C12D4/4GX 4GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Gloway International (HK) STKD4XMP2400-F 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX2400C12D4/4GX 4GB
Kingston KHX2400C12D4/4GX 4GB
内存RAM
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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK8GX4M2A2800C16 4GB
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内存RAM
Samsung M471B5173CB0-YK0 4GB
Samsung M471B5173CB0-YK0 4GB
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Kingston 9905469-143.A00LF 4GB
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Patriot Memory (PDP Systems) PSD38G16002 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK32GX4M4A2666C16 8GB
Corsair CMK32GX4M4A2666C16 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-4400C19-32GVK 32GB
G Skill Intl F4-4400C19-32GVK 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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Corsair CM4X8GD3600C18K2D 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
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Crucial Technology CT16G4SFD824A.M16FR 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Kingston 9965589-013.A00G 8GB
内存RAM