Samsung M3 78T2863QZS-CF7 1GB vs Kingston MSI26D4S9D8ME-16 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Kingston MSI26D4S9D8ME-16 16GB

Kingston MSI26D4S9D8ME-16 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值

Kingston MSI26D4S9D8ME-16 16GB

需要考虑的原因
Kingston MSI26D4S9D8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 69

左右 -92% 更低的延时
更快的写入速度，GB/s

10.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Kingston MSI26D4S9D8ME-16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 36
读取速度，GB/s

4,217.2 15.4
写入速度，GB/s

1,857.7 10.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 2720

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMK8GX4M2B3000C15 4GB

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Kingston KHX4266C19D4/8GX 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Transcend Information TS2GSH64V4B 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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Kingston 99U5474-010.A00LF 2GB

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

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Corsair CMD32GX4M4B2800C14 8GB