Samsung M3 78T2863QZS-CF7 1GB vs Kingston XRMWRN-MIE2 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.1

测试中的平均数值

Kingston XRMWRN-MIE2 16GB

需要考虑的原因
Kingston XRMWRN-MIE2 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 69

左右 -109% 更低的延时
更快的写入速度，GB/s

13.4 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Kingston XRMWRN-MIE2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 33
读取速度，GB/s

4,217.2 17.1
写入速度，GB/s

1,857.7 13.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 3286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK128GX4M8A2666C16 16GB

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AMD AE34G1601U1 4GB

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Corsair CMU64GX4M4C3200C16 16GB

Corsair CMU64GX4M4C3200C16 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB