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Samsung M3 78T2863QZS-CF7 1GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Samsung M3 78T2863QZS-CF7 1GB vs Patriot Memory (PDP Systems) 3600 C18 Series 32GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.5
    测试中的平均数值
Patriot Memory (PDP Systems) 3600 C18 Series 32GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 69
    左右 -130% 更低的延时
  • 更快的写入速度，GB/s
    15.1 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 30
  • 读取速度，GB/s
    4,217.2 left arrow 18.5
  • 写入速度，GB/s
    1,857.7 left arrow 15.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    668 left arrow 3609

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB RAM的比较

Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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