Samsung M3 78T2863QZS-CF7 1GB vs Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.1

测试中的平均数值

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

需要考虑的原因
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 69

左右 -146% 更低的延时
更快的写入速度，GB/s

7.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 28
读取速度，GB/s

4,217.2 14.1
写入速度，GB/s

1,857.7 7.5
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

668 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CTD 4GB

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Kingston KVR16N11/8-SP 8GB

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PUSKILL PJ8TFK1GM8 8GB

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Crucial Technology CT8G4SFS824A.C8FHD1 8GB

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Kingston KHX2666C11D3/4GX 4GB

Kingston KHX2666C11D3/4GX 4GB

Corsair CMZ16GX3M2A1600C10 8GB

Corsair CMZ16GX3M2A1600C10 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Samsung M391A1G43EB1-CRC 8GB

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Kingston ACR512X64D3S16C11G 4GB

Kingston ACR512X64D3S16C11G 4GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

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Samsung M393B1G70BH0-YK0 8GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB