Samsung M3 78T2863QZS-CF7 1GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

SK Hynix HMA851S6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 69

左右 -57% 更低的延时
更快的写入速度，GB/s

11.6 1,857.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix HMA851S6DJR6N-XN 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 44
读取速度，GB/s

4,217.2 14.9
写入速度，GB/s

1,857.7 11.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

668 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Crucial Technology BL8G26C16U4B.8FE 8GB

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Kingston KHX2666C16/8G 8GB

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Corsair CMK16GX4M2D2666C16 8GB

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Samsung M471B5173QH0-YK0 4GB

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Golden Empire CL16-18-18 D4-3400 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology BLS16G4S240FSD.16FAD 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB