RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Avant Technology J644GU44J2320NF 32GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Avant Technology J644GU44J2320NF 32GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Avant Technology J644GU44J2320NF 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
17
测试中的平均数值
需要考虑的原因
Avant Technology J644GU44J2320NF 32GB
报告一个错误
低于PassMark测试中的延时,ns
32
46
左右 -44% 更低的延时
更快的写入速度,GB/s
15.2
1,519.2
测试中的平均数值
更高的内存带宽,mbps
25600
3200
左右 8 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Avant Technology J644GU44J2320NF 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
32
读取速度,GB/s
2,909.8
17.0
写入速度,GB/s
1,519.2
15.2
内存带宽,mbps
3200
25600
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
3-3-3-12 / 400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
241
3491
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Avant Technology J644GU44J2320NF 32GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Avant Technology J644GU44J2320NF 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M4E4133C19 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMU32GX4M4C3400C16 8GB
Apacer Technology 75.A73AA.G03 2GB
Corsair CMK16GX4M4C3200C15 4GB
Kingston KHX3200C18D4/8G 8GB
SK Hynix GKE800SO51208-2133AH 8GB
Kingston KHX16LC9/8GX 8GB
SK Hynix HMA82GS6CJR8N-XN 16GB
Corsair CML8GX3M2A1866C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-4GNT 4GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4133C19-4GTZ 4GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kllisre DDR4-8GB 8GB
报告一个错误
×
Bug description
Source link