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Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK8GX4M1A2666C16 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMK8GX4M1A2666C16 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.2
    测试中的平均数值
Corsair CMK8GX4M1A2666C16 8GB 需要考虑的原因
Corsair CMK8GX4M1A2666C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 46
    左右 -53% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK8GX4M1A2666C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 30
  • 读取速度，GB/s
    2,909.8 left arrow 16.2
  • 写入速度，GB/s
    1,519.2 left arrow 11.5
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2966

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Corsair CMK8GX4M1A2666C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
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Avant Technology J642GU42J5213N4 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3000C16-8GVRB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
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Qimonda 64T128020EDL2.5C2 1GB
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内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
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内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
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Micron Technology ILG8GS2400A 8GB
内存RAM
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Kingston 99U5584-007.A00LF 4GB
Super Talent F24SB8GH 8GB
Super Talent F24SB8GH 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
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Corsair CM4X4GF2666C16K4 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
内存RAM