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Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Crucial Technology BLS16G4D30AESC.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
17.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
46
左右 -64% 更低的延时
更快的写入速度,GB/s
13.1
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
28
读取速度,GB/s
2,909.8
17.4
写入速度,GB/s
1,519.2
13.1
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
3437
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT351U6CFR8C-H9 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW64GX4M4C3466C16 16GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C16-16GTRS 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C16-32GTRG 32GB
Kingston 99U5428-063.A00LF 8GB
Corsair CMD16GX4M2B3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M378A2K43CB1-CRC 16GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMK64GX4M8Z2933C16 8GB
Samsung M393B2G70BH0-CK0 16GB
Avant Technology W6451U48J7240N6 4GB
Kingston 9905403-011.A03LF 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Samsung M378B5273CH0-CK0 4GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
报告一个错误
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Bug description
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