Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CB4GU2400.M8E 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 71

左右 35% 更低的延时
更快的读取速度，GB/s

2 14.8

测试中的平均数值

Crucial Technology CB4GU2400.M8E 4GB

需要考虑的原因
Crucial Technology CB4GU2400.M8E 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CB4GU2400.M8E 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 71
读取速度，GB/s

2,909.8 14.8
写入速度，GB/s

1,519.2 7.9
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1799

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR32GX4M4A2666C16 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Samsung M471A5143EB1-CRC 4GB

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G Skill Intl F4-3000C16-16GRS 16GB