Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT16G4DFD8213.16FDD1 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 76

左右 39% 更低的延时
更快的读取速度，GB/s

2 13.6

测试中的平均数值

Crucial Technology CT16G4DFD8213.16FDD1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.16FDD1 16GB

报告一个错误

更快的写入速度，GB/s

6.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 76
读取速度，GB/s

2,909.8 13.6
写入速度，GB/s

1,519.2 6.4
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 1624

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Corsair CMK32GX4M4A2400C16 8GB

Corsair CMK32GX4M4A2400C16 8GB

Crucial Technology CT51264AC800.C16FC 4GB

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Samsung M378B5173BH0-CH9 4GB

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V-Color Technology Inc. TC416G24D817 16GB