Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT16G4DFRA32A.C16FN 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT16G4DFRA32A.C16FN 16GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

Crucial Technology CT16G4DFRA32A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA32A.C16FN 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 -18% 更低的延时
更快的写入速度，GB/s

11.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 39
读取速度，GB/s

2,909.8 14.9
写入速度，GB/s

1,519.2 11.3
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 2771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-3600C19-8GTZRB 8GB

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AMD AE34G1601U1 4GB

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Kingston HP32D4S2S1ME-4 4GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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A-DATA Technology AO1P26KCST2-BWWS 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Crucial Technology BLS16G4D26BFST.16FD 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BL8G30C15U4B.M8FE 8GB