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Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C17-4GFX 4GB

Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2400C17-4GFX 4GB

总分
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 73
    左右 37% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 13.4
    测试中的平均数值
G Skill Intl F4-2400C17-4GFX 4GB 需要考虑的原因
G Skill Intl F4-2400C17-4GFX 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.0 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C17-4GFX 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 73
  • 读取速度，GB/s
    2,909.8 left arrow 13.4
  • 写入速度，GB/s
    1,519.2 left arrow 7.0
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 1468

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

G Skill Intl F4-2400C17-4GFX 4GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
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内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
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SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
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内存RAM
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