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Samsung M3 78T3354BZ0-CCC 256MB
Golden Empire CL16-16-16 D4-3200 4GB

Samsung M3 78T3354BZ0-CCC 256MB vs Golden Empire CL16-16-16 D4-3200 4GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.6
    测试中的平均数值
Golden Empire CL16-16-16 D4-3200 4GB 需要考虑的原因
Golden Empire CL16-16-16 D4-3200 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 46
    左右 -84% 更低的延时
  • 更快的写入速度，GB/s
    14.3 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Golden Empire CL16-16-16 D4-3200 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 25
  • 读取速度，GB/s
    2,909.8 left arrow 18.6
  • 写入速度，GB/s
    1,519.2 left arrow 14.3
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3413

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Golden Empire CL16-16-16 D4-3200 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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Golden Empire CL16-16-16 D4-3200 4GB
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Corsair CML8GX3M2A1600C9 4GB
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内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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Corsair CMK32GX4M2Z2400C16 16GB
内存RAM
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内存RAM
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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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