RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T3354BZ0-CCC 256MB
JUHOR JHD3000U1908JG 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs JUHOR JHD3000U1908JG 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
JUHOR JHD3000U1908JG 8GB

JUHOR JHD3000U1908JG 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 48
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 12
    测试中的平均数值
JUHOR JHD3000U1908JG 8GB 需要考虑的原因
JUHOR JHD3000U1908JG 8GB
报告一个错误
  • 更快的写入速度，GB/s
    7.8 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
JUHOR JHD3000U1908JG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 48
  • 读取速度，GB/s
    2,909.8 left arrow 12.0
  • 写入速度，GB/s
    1,519.2 left arrow 7.8
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2324

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

JUHOR JHD3000U1908JG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK64GX4M4B3600C18 16GB
Corsair CMK64GX4M4B3600C18 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C15-8GTZR 8GB
G Skill Intl F4-4000C15-8GTZR 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Unifosa Corporation GU502203EP0201 1GB
Unifosa Corporation GU502203EP0201 1GB
Corsair CMT64GX4M8X3000C15 8GB
Corsair CMT64GX4M8X3000C15 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD16GX4M2B3866C18 8GB
Corsair CMD16GX4M2B3866C18 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905625-098.A00G 16GB
Kingston 9905625-098.A00G 16GB
内存RAM