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Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905701-017.A00G 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 9905701-017.A00G 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Kingston 9905701-017.A00G 16GB

Kingston 9905701-017.A00G 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17
    测试中的平均数值
Kingston 9905701-017.A00G 16GB 需要考虑的原因
Kingston 9905701-017.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 46
    左右 -48% 更低的延时
  • 更快的写入速度，GB/s
    14.3 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905701-017.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 31
  • 读取速度，GB/s
    2,909.8 left arrow 17.0
  • 写入速度，GB/s
    1,519.2 left arrow 14.3
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3260

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Kingston 9905701-017.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMK32GX4M4A2666C15 8GB
Corsair CMK32GX4M4A2666C15 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2400C15-8GFT 8GB
G Skill Intl F4-2400C15-8GFT 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMW32GX4M2C3466C16 16GB
Corsair CMW32GX4M2C3466C16 16GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
G Skill Intl F4-4000C19-4GVK 4GB
G Skill Intl F4-4000C19-4GVK 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9965589-008.D01G 8GB
Kingston 9965589-008.D01G 8GB
内存RAM
Micron Technology 4JTF12864AZ-1G4D1 1GB
Micron Technology 4JTF12864AZ-1G4D1 1GB
G Skill Intl F4-2400C16-4GFX 4GB
G Skill Intl F4-2400C16-4GFX 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston KF2933C17S4/32G 32GB
Kingston KF2933C17S4/32G 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C14-8GTZ 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMU16GX4M2A2400C16 8GB
Corsair CMU16GX4M2A2400C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4Z3200C16 8GB
Corsair CMK32GX4M4Z3200C16 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM